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| LESHAN RADIO COMPANY, LTD. VHF / UFH Transistor NPN Silicon We declare that the material of product compliance with RoHS requirements. LMBT918LT1G 3 Ordering Information Device LMBT918LT1G LMBT918LT3G Marking M3B M3B Shipping 3000/Tape&Reel 10000/Tape&Reel 1 2 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V CEO V V CBO EBO CASE 318-08, STYLE 6 SOT-23 (TO-236AB) Value 15 30 3.0 50 Unit Vdc Vdc Vdc mAdc 1 BASE 3 COLLECTOR IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 Unit mW 2 EMITTER RJA PD 556 300 2.4 C/W mW mW/C C/W C RJA TJ , Tstg 417 -55 to +150 DEVICE MARKING LMBT9181LT1G = M3B ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = 3.0 mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = 1.0 Adc, I E = 0) Emitter-Base Breakdown Voltage (I E = 10 Adc, I C = 0) Collector Cutoff Current ( V CB = 15 Vdc, I E = 0) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CBO V 30 3.0 -- -- -- 50 Vdc Vdc nAdc V (BR)CEO 15 -- Vdc (BR)EBO I CBO 1/3 LESHAN RADIO COMPANY, LTD. LMBT918LT1G ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (I C = 3.0 mAdc, V CE = 1.0 Vdc) Collector-Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc) Base-Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc) hFE VCE(sat) V BE(sat) 20 -- -- -- 0.4 1.0 -- Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (I C = 4.0 mAdc, V CE = 10 Vdc, f = 100 MHz) Output Capacitance (V CB = 0 Vdc, I E = 0, f = 1.0 MHz) (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Noise Figure (I C = 1.0 mAdc, V CE = 6.0 Vdc, R S = 50 , f = 60 MHz) (Figure 1) Power Output (I C = 8.0 mAdc, V CB = 15 Vdc, f = 500 MHz) Common-Emitter Amplifier Power Gain (I C = 6.0 mAdc, V CB = 12 Vdc, f = 200 MHz) V BB EXTERNAL 100 k fT C obo -- -- C ibo NF P out 600 -- MHz pF 3.0 1.7 2.0 6.0 -- -- pF dB mW dB -- -- 30 11 G pe V CC 1000 pF BYPASS 0.018 F 0.018 F 3 C G 0.018 F 0.018 F NF TEST CONDITIONS I C = 1.0 mA V CE = 6.0 VOLTS R S = 50 f = 60 MHz G pe TEST CONDITIONS I C = 6.0 mA V CE = 12 VOLTS f = 200 MHz 50 RF VM Figure 1. NF, G pe Measurement Circuit 20-200 2/3 LESHAN RADIO COMPANY, LTD. LMBT918LT1G SOT-23 NOTES: A L 3 1 V G 2 BS DIM A B C D G H J J K L S V MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 C D H K 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm 3/3 |
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